NHUMB13F

NHUMB13F

$0.25
  • Description:TRANS PREBIAS 2PNP 80V 6TSSOP
  • Series:-

SKU:998e09199a08 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 80V 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:150MHz
  • Power - Max:350mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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NHUMB13F

Overview

The Nexperia NHUMB13F is a PNP/PNP Resistor-Equipped double Transistor (RET) housed in an SOT363 (SC-88) surface-mount package. It features built-in bias resistors with nominal values of R1 = 4.7 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = -10 mA and VCE = -5 V, and a collector-emitter saturation voltage (VCEsat) of no more than -100 mV under specified conditions. Total power dissipation is rated at 350 mW.

Feature Summary

  • AEC-Q101 qualified for automotive applications
  • Built-in bias resistors simplify circuit design
  • Reduces component count and pick-and-place costs

Applications

  • Digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the selected variant matches the required resistor tolerance and marking code specifications defined in the product data sheet.

Selection Notes

Select this component when a dual PNP transistor with integrated base and emitter resistors is required in a compact SOT363 footprint. Verify that the 4.7 kΩ input resistor value aligns with the target logic drive levels. Consider the -80 V breakdown voltage rating relative to the maximum operating voltage. Evaluate thermal derating requirements if ambient temperatures exceed 25 °C.

Part Context

The NHUMB13F belongs to the NHUMB10/13/9 series of PNP/PNP resistor-equipped double transistors from Nexperia. This family shares the same SOT363 package and general electrical structure but differs in internal bias resistor values. The '13' designation specifically indicates the 4.7 kΩ / 47 kΩ resistor combination within the pair.

Replacement Considerations

Direct functional substitutes within the same series include NHUMB10 and NHUMB9, provided their respective resistor values are acceptable for the design. Cross-family replacements require verification of pin compatibility and electrical parameters.

NHUMB13FNHUMB13F
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