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The Nexperia NHUMB13F is a PNP/PNP Resistor-Equipped double Transistor (RET) housed in an SOT363 (SC-88) surface-mount package. It features built-in bias resistors with nominal values of R1 = 4.7 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = -10 mA and VCE = -5 V, and a collector-emitter saturation voltage (VCEsat) of no more than -100 mV under specified conditions. Total power dissipation is rated at 350 mW.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the selected variant matches the required resistor tolerance and marking code specifications defined in the product data sheet.
Select this component when a dual PNP transistor with integrated base and emitter resistors is required in a compact SOT363 footprint. Verify that the 4.7 kΩ input resistor value aligns with the target logic drive levels. Consider the -80 V breakdown voltage rating relative to the maximum operating voltage. Evaluate thermal derating requirements if ambient temperatures exceed 25 °C.
The NHUMB13F belongs to the NHUMB10/13/9 series of PNP/PNP resistor-equipped double transistors from Nexperia. This family shares the same SOT363 package and general electrical structure but differs in internal bias resistor values. The '13' designation specifically indicates the 4.7 kΩ / 47 kΩ resistor combination within the pair.
Direct functional substitutes within the same series include NHUMB10 and NHUMB9, provided their respective resistor values are acceptable for the design. Cross-family replacements require verification of pin compatibility and electrical parameters.