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The NHUMB13X is a PNP/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMB10/13/9 series, housed in an SOT363 (SC-88) surface-mounted package. It features built-in bias resistors with R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of -80 V and an output current of -100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of 100 minimum at -10 mA, a transition frequency of 150 MHz typical, and a total power dissipation of 350 mW for the device. It is AEC-Q101 qualified.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the SOT363 footprint matches the target PCB layout. Cross-reference the AEC-Q101 qualification status if the application requires automotive-grade compliance. Ensure thermal derating curves are considered for the final assembly environment.
Select this component when a compact dual PNP solution with integrated biasing is required. The 4.7 kΩ input resistor value determines the base drive current requirements. Compare the 80 V rating against system voltage peaks. Consider the SOT363 package dimensions for space-constrained designs. Verify compatibility with existing BC856 series alternatives if used as a drop-in replacement.
This part belongs to the NHUMB10/13/9 family of PNP/PNP resistor-equipped double transistors. The '13' designation specifically indicates the 4.7 kΩ / 47 kΩ resistor ratio configuration within the SOT363 package. It serves as the PNP counterpart to the NPN/NPN NHUMH13 and the complementary NPN/PNP NHUMD13 variants.
NHUMB10 and NHUMB9 are direct functional substitutes within the same package but feature different internal resistor values (2.2 kΩ/47 kΩ and 10 kΩ/47 kΩ respectively). Designers must verify that the altered bias currents do not affect circuit operation before swapping between these series members.