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The NHUMB1F is a PNP/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMB11/1/2 series, housed in an SOT363 (SC-88) surface-mounted package. It features built-in bias resistors with nominal values of R1 = 22 kΩ and R2 = 22 kΩ. The device supports a collector-emitter voltage (VCEO) of -80 V and an output current (IO) of -100 mA per transistor. Total power dissipation is rated at 350 mW for the device and 235 mW per transistor at 25 °C ambient temperature. The component is AEC-Q101 qualified.
Verify the specific suffix against the official Nexperia ordering information table to confirm resistor values. Confirm that the SOT363 package version matches the required footprint. Ensure the marking code corresponds to the selected variant before finalizing procurement orders.
Select this component when a compact dual PNP solution with integrated base resistors is required. The 80 V rating provides margin for 48 V automotive systems. Verify that the 22 kΩ resistor values align with the target logic drive levels and switching speeds for the specific application design.
This part belongs to the NHUMB11/1/2 series of 80 V PNP/PNP RETs. Complementary NPN/NPN and NPN/PNP variants are available within the same family, such as the NHUMH1 and NHUMD2, offering flexibility for different polarity requirements while maintaining the same small SOT363 footprint.
Direct substitutes include other PNP/PNP RETs in the SOT363 package with similar 80 V ratings and comparable resistor values. Verify pinout compatibility and thermal characteristics when replacing with components from other manufacturers.
The NHUMB1F has nominal bias resistor values of R1 = 22 kΩ and R2 = 22 kΩ.
Yes, the device is qualified according to the AEC-Q101 standard for discrete semiconductors.
The maximum collector-emitter voltage (VCEO) is -80 V.