NHUMB1X

Overview

The NHUMB1X is a PNP/PNP Resistor-Equipped double Transistor (RET) family member housed in an SOT363 (SC-88) surface-mounted package. It integrates two isolated PNP transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V and a maximum output current (IO) of -100 mA per transistor. The device supports a total power dissipation of 350 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. Transition frequency (fT) reaches 150 MHz. Built-in resistor values vary by sub-model: NHUMB1 features 22 kΩ for both R1 and R2, while NHUMB11 uses 10 kΩ and NHUMB2 uses 47 kΩ.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors within a single compact SMD package
• Provides high breakdown voltage capability suitable for demanding switching applications
• Reduces component count and simplifies circuit layout through integrated resistor networks
• Qualified under AEC-Q101 standards for automotive reliability requirements

Applications

• Digital logic applications requiring signal inversion or buffering
• Cost-effective replacement for discrete BC856 series components
• Direct control of IC input pins with integrated pull-up/pull-down functionality
• Load switching circuits where space constraints are critical

Procurement Notes

Verify the specific suffix number (1, 11, or 2) to ensure correct resistor values match the design requirements. Confirm packaging format availability, as reels typically contain 3000 units. Check for RoHS compliance status and recent Product Change Notifications before finalizing procurement orders.

Selection Notes

Select based on required bias resistance; NHUMB1 offers 22 kΩ, NHUMB11 provides 10 kΩ, and NHUMB2 supplies 47 kΩ. Ensure the application voltage does not exceed the -80 V collector-emitter rating. Consider thermal derating curves if operating above 25 °C ambient temperature to maintain safe junction temperatures below 150 °C.

Part Context

This component belongs to the Nexperia NHUMB11/1/2 series of PNP/PNP RETs. It serves as the complement to NPN/NPN types like NHUMH1X and NPN/PNP variants such as NHUMD2. All share the same SOT363 footprint but differ in internal resistor configurations and complementary pairings.

Replacement Considerations

NHUMB11 and NHUMB2 are direct functional replacements within the same series offering different resistor values. For discrete equivalents, standard BC856 dual transistors may be used, though they require external resistors and occupy more board space.

FAQ

What is the difference between NHUMB1, NHUMB11, and NHUMB2?

The primary difference lies in the built-in bias resistor values. NHUMB1 has 22 kΩ resistors, NHUMB11 has 10 kΩ resistors, and NHUMB2 has 47 kΩ resistors for both R1 and R2.

Is this component suitable for automotive applications?

Yes, the NHUMB1X series is qualified according to the AEC-Q101 standard for stress test qualification of discrete semiconductors, making it suitable for automotive electronics.

What is the maximum power dissipation for the entire device?

The total power dissipation (Ptot) for the device is 350 mW when the ambient temperature is 25 °C or lower. This value must be derated at higher ambient temperatures.