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The NHUMB9F is a PNP/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMB10/13/9 series, housed in an SOT363 (SC-88) surface-mounted package. It features built-in bias resistors with nominal values of R1 = 10 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA per transistor. Total power dissipation is rated at 350 mW, with a junction temperature limit of 150 °C. The transition frequency (fT) is typically 150 MHz.
Verify the specific ordering suffix 'F' against the manufacturer's official documentation to confirm reel packaging specifications. Ensure the selected variant matches the required resistor tolerances and marking codes defined in the product data sheet before finalizing procurement orders.
Select the NHUMB9F when a 10 kΩ input bias resistor is required alongside a 47 kΩ secondary resistor. Compare its 80 V rating against lower-voltage alternatives if higher breakdown voltage is necessary. Verify that the SOT363 footprint aligns with the target PCB layout constraints.
The NHUMB9F belongs to the NHUMB10/13/9 series of PNP/PNP RETs. It shares the same SOT363 package and electrical characteristics as NHUMB10 and NHUMB13, differing primarily in the resistance value of the first bias resistor (R1). This series serves as a compact solution for replacing multiple discrete components in space-constrained designs.
Direct functional equivalents within the same series include NHUMB10 and NHUMB13, though their R1 values differ. For NPN/NPN configurations, consider the NHUMH9 complement. For mixed NPN/PNP configurations, the NHUMD9 is the designated complement.