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The NHUMB9X is a PNP/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in an SOT363 (SC-88) surface-mounted package. It features two integrated PNP transistors with built-in bias resistors: R1 is 10 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of -80 V and a continuous output current of -100 mA per transistor. Total power dissipation is rated at 350 mW. Key electrical characteristics include a DC current gain (hFE) of at least 100 at -10 mA and a transition frequency (fT) of 150 MHz. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the AEC-Q101 qualification status aligns with project requirements. Cross-reference the pinout diagram with the PCB footprint design to prevent installation errors during assembly.
Select this component when a compact dual PNP solution with pre-biased inputs is required. The 10 kΩ input resistor value determines the base drive current requirements. Ensure the application voltage does not exceed the -80 V collector-emitter rating. Consider the thermal resistance values if operating near the maximum junction temperature limits.
This part belongs to the NHUMB10/13/9 series of resistor-equipped double transistors. It serves as the PNP/PNP variant within this family, complemented by NPN/NPN (NHUMH9) and NPN/PNP (NHUMD9) versions. All variants share the same SOT363 package and general electrical characteristics, differing primarily in transistor polarity and specific resistor values.
Direct functional equivalents within the same series include NHUMB10 and NHUMB13, though their resistor values differ. For different polarities, consider NHUMH9 or NHUMD9. Verify compatibility before substitution as resistor ratios vary across the series.