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The NHUMD10-QX is an AEC-Q101 qualified dual pre-biased transistor array manufactured by Nexperia. It integrates one NPN and one PNP bipolar junction transistor with built-in base and emitter resistors in a compact SOT-363 (SC-88) surface-mount package. The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 100 mA. Internal biasing components include a 2.2 kΩ base resistor and a 47 kΩ emitter resistor. Key electrical parameters feature a DC current gain of at least 100 at 10 mA, saturation voltages as low as 100 mV, and transition frequencies of 150 MHz to 170 MHz. Power dissipation is rated at 350 mW, with an operating temperature range from -55 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm automotive grade status and pinout compatibility. Ensure the ordering part number matches the required resistance values and package type. Cross-reference datasheets for thermal derating curves and soldering profiles to guarantee assembly integrity and long-term operational stability.
Select this component when a compact solution is needed for simultaneous NPN and PNP switching with fixed biasing. The high breakdown voltage and wide temperature range make it suitable for automotive and industrial digital interfaces. Verify that the integrated resistor values align with the target logic levels and drive requirements.
This part belongs to the NHUMx series of resistor-equipped double transistors from Nexperia. It serves as a cost-effective alternative to discrete transistor pairs, reducing component count and assembly time. The series includes variants with different resistance values and complementary configurations to suit various digital application needs.
Check for direct substitutes within the NHUMD family, such as the NHUMD10 or NHUMD13, which share similar electrical characteristics but may differ in internal resistance values. Verify package compatibility and ensure any replacement maintains the required AEC-Q101 qualification if used in automotive systems.
The NHUMD10-QX features a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter resistor (R2).
Yes, the NHUMD10-QX is qualified according to the AEC-Q101 standard for stress test qualification of integrated circuits.
The maximum power dissipation (Pd) is rated at 350 mW.