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The NHUMD10F is an NPN/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors R1 and R2. The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 350 mW. Transition frequencies are specified at 170 MHz for the NPN section and 150 MHz for the PNP section. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Confirm that the requested part number matches the exact resistor values and polarity configuration required for the target application design.
Select this component when space-constrained designs require both NPN and PNP switching capabilities within a single footprint. Ensure the application voltage does not exceed the 80 V limit and that the total power dissipation remains within the 350 mW thermal constraints under operating conditions.
This device belongs to the NHUMD series of resistor-equipped double transistors. It serves as the mixed-polarity complement to the NHUMB series (PNP/PNP) and NHUMH series (NPN/NPN). All variants share the same SOT363 package dimensions and general electrical characteristics while differing in internal resistor configurations.
Direct functional equivalents include the NHUMB10F (PNP/PNP) and NHUMH10F (NPN/NPN) from the same family. Designers replacing discrete BC846 or BC856 components should verify that the integrated resistor values align with their existing bias requirements.