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The NHUMD10X is an NPN/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors: R1 is 2.2 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Total power dissipation is rated at 350 mW. Transition frequencies are specified at 170 MHz for the NPN section and 150 MHz for the PNP section. The component is qualified to AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the delivered components match the SOT363 package outline dimensions and marking codes defined in the official data sheet. Check for any recent Product Change Notifications regarding assembly location or material composition updates before finalizing procurement contracts.
Select this component when a compact solution for complementary NPN/PNP switching is required without external base resistors. Ensure the application voltage does not exceed the 80 V collector-emitter rating. Verify that the 100 mA current limit meets the load requirements. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits in confined PCB spaces.
This part belongs to the NHUMD10/13/9 series of resistor-equipped double transistors. The '10' designation specifically indicates the 2.2 kΩ bias resistor value for the input stage. Other variants in the family include NHUMD13 and NHUMD9, which feature different resistor ratios while maintaining the same package and general electrical characteristics.
Compatible alternatives within the same series include NHUMD13 and NHUMD9. These parts share the SOT363 package but utilize different bias resistor values (4.7 kΩ and 10 kΩ respectively). Direct substitution requires verifying that the altered input impedance matches the driving circuit requirements.