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The NHUMD12X is an NPN/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMD3/2/12 series, housed in a SOT363 (SC-88) surface-mounted package. It features built-in bias resistors with nominal values of 47 kΩ for both R1 and R2. The device supports a maximum collector-emitter voltage (VCEO) of 80 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation reaches 350 mW at temperatures up to 25 °C, with a junction temperature limit of 150 °C. Transition frequencies are rated at 170 MHz for the NPN section and 150 MHz for the PNP section.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required resistor tolerance and marking code specifications defined in the official product data sheet before finalizing procurement orders.
Select this component when an NPN/PNP pair with high-voltage ratings and integrated base resistors is required in a compact footprint. Ensure the application voltage does not exceed the 80 V collector-emitter rating. Verify thermal management capabilities against the specified power derating curves for the target ambient temperature conditions.
This part belongs to the NHUMD3/2/12 series of resistor-equipped double transistors. It shares the same SOT363 package and general electrical characteristics as the NHUMD3 and NHUMD2 variants, distinguished primarily by its specific 47 kΩ resistor values. Complementary NPN/NPN and PNP/PNP configurations are available within the same family.
Direct functional substitutes within the same series include NHUMD3 and NHUMD2, though their internal resistor values differ. For identical resistance values, verify availability of the base NHUMD12 part number. Cross-reference with other manufacturers' NPN/PNP RETs only if pinout and voltage ratings are strictly matched.