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The NHUMD13F is an NPN/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMD10/13/9 series, housed in a SOT363 (SC-88) surface-mounted package. It integrates an NPN transistor with a 4.7 kΩ bias resistor and a PNP transistor with a 47 kΩ bias resistor. The device supports a collector-emitter voltage of 80 V and an output current of 100 mA per transistor. Total power dissipation is rated at 350 mW at ambient temperatures up to 25 °C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix 'F' against official Nexperia documentation to confirm tape and reel specifications or manufacturing site codes. Ensure compatibility with standard SOT363 footprints during PCB layout. Confirm RoHS compliance status via the latest product data sheet revision before finalizing procurement orders.
Select the NHUMD13F when an NPN/PNP pair with specific 4.7 kΩ and 47 kΩ internal bias resistors is required. This part replaces discrete components in the same SOT363 footprint. Verify that the 80 V rating and 100 mA current limits meet the application requirements. Consider thermal derating if operating above 25 °C ambient temperature.
The NHUMD13F belongs to the NHUMD10/13/9 family of NPN/PNP resistor-equipped double transistors. These devices share the SOT363 package but differ in internal resistor values. The NHUMD13 variant specifically provides a 4.7 kΩ resistor for the NPN section and a 47 kΩ resistor for the PNP section, distinguishing it from the NHUMD10 and NHUMD9 models.
Direct substitutes within the same family include NHUMD10 and NHUMD9, though their internal resistor values differ. For equivalent functionality with different resistor ratios, verify the specific R1 and R2 requirements of the target circuit before substituting.