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The Nexperia NHUMD13X is an NPN/PNP Resistor-Equipped double Transistor (RET) housed in a SOT363 (SC-88) surface-mounted package. It integrates one NPN transistor with a 4.7 kΩ bias resistor and one PNP transistor with a 47 kΩ bias resistor. The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 80 V. Total power dissipation reaches 350 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. Transition frequencies are rated at 170 MHz for the NPN section and 150 MHz for the PNP section.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Confirm that the requested part number matches the exact resistor values and polarity configuration required for the target design before finalizing procurement orders.
Select this component when a compact dual-transistor solution with integrated biasing is required for digital logic interfacing. Ensure the 80 V voltage rating and 100 mA current capacity align with the load requirements. Verify that the specific 4.7 kΩ and 47 kΩ resistor values provided by the NHUMD13 variant suit the intended input drive characteristics.
The NHUMD13X belongs to the NHUMD10/13/9 series of NPN/PNP resistor-equipped double transistors from Nexperia. These devices are designed to replace discrete transistor and resistor combinations in space-constrained designs. The 'X' suffix typically denotes tape-and-reel packaging for automated assembly processes.
NHUMD10X and NHUMD9X are direct functional alternatives within the same series, differing only in the internal R1 resistor value (2.2 kΩ and 10 kΩ respectively). Designers must verify that the alternative resistor values meet the specific biasing requirements of the application.