SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHUMD2-QX is a dual bipolar junction transistor (BJT) manufactured by Nexperia, housed in an SOT363 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 80 V. Key electrical parameters include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 10 V, and a saturation voltage of 100 mV. Power dissipation is rated at 350 mW, with a gain-bandwidth product (fT) of 150 MHz. The component functions reliably across an operating temperature range from -55 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Ensure the ordering part number matches the required package variant and quality grade. Cross-reference the manufacturer's latest datasheet for any updates on pinout configurations or thermal characteristics before finalizing procurement orders.
Select this component when a compact dual BJT solution is needed for mixed polarity signal processing. The 80 V rating suits moderate voltage applications, while the 100 mA current capability supports standard switching loads. Consider the SOT363 package constraints for PCB layout and thermal management requirements relative to the 350 mW power dissipation limit.
The NHUMD2-QX belongs to Nexperia's portfolio of small-signal dual transistors designed for high-density electronics. The 'Q' suffix typically indicates automotive qualification standards, aligning with AEC-Q101 reliability requirements. This series provides a cost-effective alternative to discrete transistor pairs, simplifying assembly and reducing board space in consumer and industrial devices.
Check for direct equivalents such as the BC847/BC857 dual variants or other SOT363 NPN/PNP combinations from manufacturers like ON Semiconductor or STMicroelectronics. Verify that substitute parts match the 80 V voltage rating and 100 mA current limits to ensure functional compatibility without redesigning the surrounding circuitry.