SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHUMD2F is an NPN/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMD3/2/12 series, housed in a SOT363 (SC-88) surface-mounted package. It features built-in bias resistors with nominal values of 22 kΩ for both R1 and R2. The device supports a maximum collector-emitter voltage (VCEO) of 80 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation reaches 350 mW at temperatures up to 25 °C, with a junction temperature limit of 150 °C. The transition frequency (fT) is typically 150 MHz.
Verify the specific suffix 'F' against official Nexperia documentation to confirm reel packaging or tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin codes via the latest product data sheet before finalizing procurement orders.
Select this RET when space constraints require a compact SOT363 package. Ensure the 22 kΩ internal resistor values align with the required base drive currents. Verify that the 80 V rating meets the system's voltage requirements and that thermal management supports the 350 mW dissipation limit.
This component belongs to the NHUMD3/2/12 family of NPN/PNP resistor-equipped double transistors. It shares the same SOT363 footprint and electrical characteristics as the NHUMD2, differing primarily in the ordering suffix which denotes packaging variations rather than functional changes.
NHUMD2 serves as the direct functional equivalent within the same series. For complementary configurations, consider NHUMB2 (PNP/PNP) or NHUMH2 (NPN/NPN). Verify pinout compatibility and resistor tolerance matches when substituting.