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The NHUMD2X is an NPN/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors (R1=22 kΩ, R2=22 kΩ). Key electrical parameters include a collector-emitter voltage of 80 V, a maximum output current of 100 mA per transistor, and a total power dissipation of 350 mW. The device features a minimum DC current gain of 70 at 10 mA and 5 V, with transition frequencies of 170 MHz for the NPN section and 150 MHz for the PNP section.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the AEC-Q101 qualification aligns with target automotive application requirements. Cross-reference pin assignments and marking codes during PCB layout finalization to prevent assembly errors.
Select this component when a complementary NPN/PNP pair with integrated base resistors is required in a minimal footprint. Ensure the 22 kΩ internal resistor values match the drive source impedance and switching speed requirements. Verify thermal derating curves if operating near the 150 °C junction temperature limit.
This part belongs to the NHUMD3/2/12 series of 80 V, 100 mA NPN/PNP resistor-equipped double transistors. It shares the SOT363 package with variants like NHUMD3 and NHUMD12, which differ primarily in their internal resistor values. The series is designed as a cost-saving alternative to discrete general-purpose transistor pairs in digital applications.
NHUMD3 and NHUMD12 are direct package-compatible alternatives within the same series, differing only in internal resistor values. For NPN/NPN configurations, consider the NHUMH2X. For PNP/PNP configurations, consider the NHUMB2X.