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The NHUMD3F is an NPN/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors of 10 kΩ each (R1 and R2). The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Transition frequencies are rated at 170 MHz for the NPN section and 150 MHz for the PNP section. Total power dissipation reaches 350 mW, with a DC current gain minimum of 50 at 10 mA and 5 V.
Verify the specific ordering suffix 'F' against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Confirm that the AEC-Q101 qualification status aligns with the target application requirements before finalizing procurement decisions.
Select this component when space constraints require a dual transistor solution with integrated base resistors. The 10 kΩ resistor values provide standard biasing for digital interfaces. Ensure the 80 V rating exceeds the maximum operating voltage of the target circuit to maintain safety margins.
This part belongs to the NHUMD3/2/12 series of 80 V, 100 mA NPN/PNP resistor-equipped double transistors. Other members in this family include NHUMD2 and NHUMD12, which differ primarily in their internal resistor values while maintaining the same package and electrical ratings.
Direct substitutes within the same series include NHUMD2 and NHUMD12, though they feature different resistor ratios. For pin-compatible alternatives with varying resistor values, consider the broader NHUMD family or check Nexperia's official cross-reference lists for equivalent RET devices.