NHUMD3X

Overview

The NHUMD3X is an NPN/PNP Resistor-Equipped Double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mount package. It integrates one NPN and one PNP transistor with built-in bias resistors of 10 kΩ each (R1 and R2). The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at 10 mA and 5 V, a transition frequency (fT) of 170 MHz for the NPN and 150 MHz for the PNP, and a total power dissipation of 350 mW. It is qualified to AEC-Q101 standards.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in base bias resistors to simplify circuit design.
• High breakdown voltage capability suitable for demanding digital applications.
• AEC-Q101 qualified for automotive reliability requirements.
• Compact SOT363 package reduces component count and pick-and-place costs.

Applications

• Digital logic circuits
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact resistor values and package type specified in the design requirements. Cross-reference the marking code '6M' with the manufacturing site code to validate authenticity. Ensure compliance with RoHS3 directives as stated in the product data sheet.

Selection Notes

Select the NHUMD3X when a compact solution for driving digital interfaces or switching low-power loads is required. The 10 kΩ internal resistors are suitable for standard logic levels. Consider the 80 V rating for applications exceeding typical 5 V or 12 V rail voltages. Verify thermal constraints, as the total power dissipation is limited to 350 mW in the SOT363 package. Compare against discrete BJT pairs to evaluate space and assembly cost savings.

Part Context

The NHUMD3X belongs to the NHUMD3/2/12 series of NPN/PNP resistor-equipped double transistors. It shares the same SOT363 package and general architecture as the NHUMD2 and NHUMD12 variants, differing primarily in the resistance values of the integrated bias resistors. This series is designed to replace discrete transistor combinations in digital applications, offering a standardized footprint for Nexperia's RET family.

Replacement Considerations

Direct functional equivalents within the same series include NHUMD2 and NHUMD12, though their internal resistor values differ. For discrete replacements, consider separate NPN and PNP BJTs such as BC846 and BC856, but verify that the external resistor network meets the impedance and power requirements previously handled by the integrated components.

FAQ

What are the specific values of the built-in bias resistors for the NHUMD3X?

The NHUMD3X features two built-in bias resistors, R1 and R2, both with a nominal value of 10 kΩ.

Is the NHUMD3X suitable for automotive applications?

Yes, the NHUMD3X is qualified according to the AEC-Q101 standard for stress test qualification of discrete semiconductors, making it suitable for automotive applications.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) for the NHUMD3X is 80 V.