NHUMD9F

NHUMD9F

$0.25
  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-

SKU:64e9a413dde2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:170MHz, 150MHz
  • Power - Max:350mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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NHUMD9F

Overview

The NHUMD9F is an NPN/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMD10/13/9 series, housed in a SOT363 (SC-88) surface-mounted package. It integrates one NPN and one PNP transistor with built-in bias resistors: R1 is 10 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Transition frequencies are rated at 170 MHz for the NPN section and 150 MHz for the PNP section. Total power dissipation reaches 350 mW, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive reliability.

Feature Summary

  • Integrates dual transistors with built-in bias resistors to simplify circuit design
  • High breakdown voltage capability suitable for demanding environments
  • Reduces component count and pick-and-place manufacturing costs
  • Qualified for automotive applications under AEC-Q101 standards

Applications

  • Digital logic applications
  • Controlling IC inputs
  • Switching loads
  • Cost-saving alternative to BC846/BC856 series

Procurement Notes

Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging or marking variations. Confirm RoHS compliance status and ensure the selected variant matches the required SOT363 footprint dimensions for PCB layout compatibility.

Selection Notes

Select this RET when space constraints require combining discrete transistors with base resistors. Ensure the 10 kΩ input resistance aligns with the driving source impedance. Verify that the 80 V rating exceeds the peak voltage spikes present in the target application circuit.

Part Context

This component belongs to the NHUMD10/13/9 family of resistor-equipped double transistors. Variants within the series differ primarily by the internal resistor values while maintaining identical pinouts and packages. The NHUMD9F specifically utilizes a 10 kΩ base resistor configuration.

Replacement Considerations

Direct complements include NHUMB9 (PNP/PNP configuration) and NHUMH9 (NPN/NPN configuration). Other series members like NHUMD10 or NHUMD13 offer different resistor ratios but share the same physical package.

NHUMD9FNHUMD9F
$0.25
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