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The NHUMD9F is an NPN/PNP Resistor-Equipped double Transistor (RET) from the Nexperia NHUMD10/13/9 series, housed in a SOT363 (SC-88) surface-mounted package. It integrates one NPN and one PNP transistor with built-in bias resistors: R1 is 10 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Transition frequencies are rated at 170 MHz for the NPN section and 150 MHz for the PNP section. Total power dissipation reaches 350 mW, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive reliability.
Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging or marking variations. Confirm RoHS compliance status and ensure the selected variant matches the required SOT363 footprint dimensions for PCB layout compatibility.
Select this RET when space constraints require combining discrete transistors with base resistors. Ensure the 10 kΩ input resistance aligns with the driving source impedance. Verify that the 80 V rating exceeds the peak voltage spikes present in the target application circuit.
This component belongs to the NHUMD10/13/9 family of resistor-equipped double transistors. Variants within the series differ primarily by the internal resistor values while maintaining identical pinouts and packages. The NHUMD9F specifically utilizes a 10 kΩ base resistor configuration.
Direct complements include NHUMB9 (PNP/PNP configuration) and NHUMH9 (NPN/NPN configuration). Other series members like NHUMD10 or NHUMD13 offer different resistor ratios but share the same physical package.