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The NHUMH10-QX is an AEC-Q101 qualified dual pre-biased BJT array in a SOT-363 package. It integrates one NPN and one PNP transistor with built-in base resistors (R1=2.2kΩ, R2=47kΩ). Key electrical parameters include a maximum collector-emitter voltage of 80V, continuous collector current of 100mA, and transition frequencies of 170MHz for the NPN and 150MHz for the PNP. The device supports a maximum power dissipation of 350mW.
Verify the specific suffix against official Nexperia documentation to confirm exact packaging and tape-and-reel specifications. Ensure the procurement channel provides valid traceability records for automotive-grade components. Cross-reference the ordering code with the manufacturer's latest datasheet to avoid discrepancies in pinout or electrical ratings.
Select this component when a mixed NPN/PNP configuration is required in a minimal footprint. The integrated resistors eliminate external biasing networks, reducing board space and assembly costs. Verify that the 80V rating and 100mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the NHUMH series of resistor-equipped double transistors from Nexperia. It serves as a complement to other variants like the NHUMB10 (PNP/PNP) and NHUMD10 (NPN/PNP), offering a standardized solution for digital switching tasks within the same compact SOT-363 form factor family.
Publicly confirmed substitutes include the NHUMH10 and NHUMH10X. Verify compatibility with these equivalents by comparing the internal resistor values and transition frequencies against the original design specifications.