NHUMH10X

Overview

The NHUMH10X is a dual NPN resistor-equipped transistor (RET) from Nexperia, housed in an SOT363 (SC-88/TSSOP6) surface-mount package. It integrates two NPN transistors with built-in bias resistors: R1 at 2.2 kΩ and R2 at 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a maximum output current (IO) of 100 mA per transistor, and a total power dissipation (Ptot) of 350 mW for the device. The transition frequency (fT) is typically 170 MHz, with a DC current gain (hFE) minimum of 100 at 10 mA.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count.
• Provides high breakdown voltage capability suitable for digital switching applications.
• Simplifies circuit design by eliminating the need for discrete base resistors.

Applications

• Digital logic circuits
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific suffix 'X' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the procurement source provides the correct JEITA type number corresponding to the requested resistor values. Confirm that the non-automotive qualification status aligns with the target application requirements before finalizing orders.

Selection Notes

Select the NHUMH10X when a dual NPN configuration with integrated biasing is required in a compact footprint. Compare the 2.2 kΩ input resistor value against other series members like NHUMH13 or NHUMH9 if different drive characteristics are needed. Verify that the 80 V rating and 100 mA current capacity meet the load requirements of the intended switching application.

Part Context

The NHUMH10X belongs to the NHUMH10/13/9 series of NPN/NPN resistor-equipped double transistors. This family shares the same SOT363 package but varies in internal resistor values to offer flexibility for different digital interface needs. It serves as a cost-effective alternative to discrete transistor-resistor combinations in space-constrained designs.

Replacement Considerations

Direct functional substitutes within the same series include NHUMH13X and NHUMH9X, which share the package but differ in R1 values. For PNP equivalents, consider the NHUMB10X or NHUMD10X variants. Verify pin compatibility and thermal performance when substituting across the series.