NHUMH11F

Overview

The NHUMH11F is an NPN/NPN Resistor-Equipped Double Transistor (RET) from the Nexperia NHUMH11/1/2 series, housed in a SOT363 (SC-88) surface-mounted plastic package. It integrates two NPN transistors with built-in bias resistors of 10 kΩ each. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V and an output current capability of 100 mA per transistor. The device features a total power dissipation of 350 mW at 25 °C ambient temperature and is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design and reduce component count.
• High breakdown voltage capability suitable for demanding switching applications.
• Qualified to AEC-Q101 automotive standards for reliability in critical systems.
• Compact SOT363 package reduces pick-and-place costs and board space.

Applications

• Digital logic applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix 'F' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the part number matches the exact resistor values required for the design, as the NHUMH11 variant specifies 10 kΩ resistors. Cross-reference the marking code '6F%' for identification during assembly inspection.

Selection Notes

Select the NHUMH11F when a dual NPN configuration with integrated base resistors is required for digital switching or input control. The 10 kΩ internal resistors define the drive characteristics; verify that this value aligns with the source impedance of the driving circuit. Consider the SOT363 footprint constraints and thermal derating curves if operating near the maximum power dissipation limits.

Part Context

The NHUMH11F belongs to the NHUMH11/1/2 family of resistor-equipped double transistors. This series offers variations in internal resistance values (10 kΩ, 22 kΩ, and 47 kΩ) within the same SOT363 package. The NHUMH11 specifically denotes the 10 kΩ variant, providing a standardized solution for replacing discrete resistor-transistor networks in compact designs.

Replacement Considerations

Direct functional equivalents may include other NPN/NPN RETs in SOT363 packages with matching 10 kΩ bias resistors and 80 V ratings. Verify pinout compatibility and thermal characteristics before substitution. Check for AEC-Q101 qualification if the application requires automotive-grade reliability.