NHUMH11X

Overview

The NHUMH11X is an NPN/NPN Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88) surface-mounted package. It features built-in bias resistors R1 and R2, both nominally 10 kΩ. The device supports a maximum collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at 10 mA, a transition frequency of 170 MHz, and a total power dissipation of 350 mW. It is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

• Integrates dual NPN transistors with matched 10 kΩ base and emitter bias resistors to reduce component count.
• Provides high breakdown voltage capability suitable for demanding digital switching environments.
• AEC-Q101 qualified for reliability in automotive electronic systems.
• Utilizes a compact SOT363 footprint to minimize board space and pick-and-place costs.

Applications

• Digital logic circuits and signal processing
• Control interfaces for integrated circuit inputs
• Load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested quantity aligns with the available reel or cut-tape options provided by authorized distributors. Cross-reference the part number with the latest datasheet revision to validate current production status and availability constraints before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with fixed 10 kΩ biasing is required within a small SOT363 package. Ensure the application voltage does not exceed the 80 V collector-emitter rating. Verify that the 100 mA current limit meets the load requirements. Consider the AEC-Q101 qualification if the design targets automotive-grade reliability standards.

Part Context

This part belongs to the NHUMH11/1/2 series of NPN/NPN resistor-equipped double transistors. Variants within the series differ primarily in the resistance values of the internal bias resistors while maintaining the same package and general electrical ratings. The NHUMH11X specifically denotes the 10 kΩ / 10 kΩ configuration.

Replacement Considerations

Direct functional substitutes within the same series include NHUMH1 and NHUMH2, which offer different resistor ratios. Complementary PNP/PNP versions are available as NHUMB11. Designers should verify pin compatibility and thermal performance when substituting these variants.

FAQ

What are the specific values of the built-in bias resistors?

For the NHUMH11X, both the base resistor (R1) and the emitter resistor (R2) have a nominal value of 10 kΩ.

Is this component suitable for automotive applications?

Yes, the NHUMH11X is qualified according to the AEC-Q101 standard for stress test qualification of discrete semiconductors.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 80 V.