NHUMH13F

Overview

The Nexperia NHUMH13F is an NPN/NPN resistor-equipped double transistor (RET) housed in a SOT363 (SC-88) surface-mounted plastic package. It integrates two NPN transistors with built-in bias resistors, featuring R1 values of 4.7 kΩ and R2 values of 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 80 V and an output current capability of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = 10 mA, a transition frequency (fT) of 170 MHz, and a total power dissipation of 350 mW for the dual device at Tamb ≤ 25 °C.

Feature Summary

• Integrates two NPN transistors with fixed internal bias resistors to reduce component count
• Provides high breakdown voltage suitable for demanding digital switching applications
• Utilizes a compact SOT363 package to minimize printed-circuit-board area and assembly costs

Applications

• Digital logic circuits requiring input buffering or level shifting
• Controlling integrated circuit inputs directly from microcontrollers
• Low-side load switching for small signal loads
• Cost-effective alternative to discrete transistor pairs in consumer electronics

Procurement Notes

Verify the specific suffix 'F' against the official Nexperia ordering information table to confirm tape-and-reel packaging specifications. Ensure design compliance with non-automotive qualification status as indicated in the revision history. Confirm thermal derating requirements based on the intended ambient temperature conditions during operation.

Selection Notes

Select the NHUMH13 variant specifically when a 4.7 kΩ base resistor (R1) is required for the input stage. Compare the 80 V collector-emitter voltage rating against the maximum operating voltage of the target circuit. Evaluate the 100 mA output current limit to ensure it meets the load requirements without exceeding the total power dissipation limits defined for the SOT363 package.

Part Context

This component belongs to the NHUMH10/13/9 series of NPN/NPN resistor-equipped double transistors. All members share the same SOT363 package and general electrical structure but differ in their internal bias resistor values. The NHUMH13 is distinguished by its 4.7 kΩ R1 resistor, offering a specific impedance match compared to the 2.2 kΩ NHUMH10 or 10 kΩ NHUMH9 variants.

Replacement Considerations

Direct functional substitutes within the same family include NHUMH10 and NHUMH9, provided the different internal resistor values are acceptable for the circuit design. Cross-family replacements must be verified for pin compatibility and electrical ratings.