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The NHUMH13X is an NPN/NPN Resistor-Equipped double Transistor (RET) from the Nexperia NHUMH10/13/9 series, housed in a SOT363 (SC-88) surface-mounted package. It features two integrated NPN transistors with built-in bias resistors: R1 is 4.7 kΩ and R2 is 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 80 V and an output current (IO) of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = 10 mA, a transition frequency (fT) typical of 170 MHz, and a total power dissipation of 350 mW per device at Tamb ≤ 25 °C.
Verify the specific ordering suffix against the manufacturer's official catalog to confirm tape-and-reel specifications or marking codes. Confirm that the non-automotive qualification status aligns with the target application requirements, as automotive-grade alternatives may be required for regulated environments.
Select this component when a dual NPN configuration with pre-defined base resistors is needed to simplify digital interface designs. Ensure the 80 V voltage rating and 100 mA current capacity exceed the maximum circuit demands. Consider the SOT363 footprint constraints during PCB layout planning.
This part belongs to the NHUMH10/13/9 family of NPN/NPN RETs. Variants within the series differ primarily by the resistance values of the internal bias resistors (R1), while maintaining identical package dimensions and general electrical performance profiles for standard switching tasks.
Direct functional substitutes within the same series include NHUMH10 and NHUMH9, which share the SOT363 package but utilize different internal resistor values (2.2 kΩ and 10 kΩ for R1, respectively). Verify resistor compatibility before substitution.