SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia NHUMH1F is an NPN/NPN Resistor-Equipped double Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It features two internally isolated transistors with integrated bias resistors, R1 and R2, both nominally 22 kΩ. The device supports a collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 10 mA and 5 V, a transition frequency of 170 MHz, and a total power dissipation of 350 mW. It is qualified to AEC-Q101 standards for automotive reliability.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the delivered components match the exact part number designation and marking codes specified in the datasheet to guarantee functional compatibility and quality assurance.
Select this component when a compact dual NPN solution with fixed biasing is required. Ensure the 22 kΩ resistor values align with the target drive currents. Verify that the 80 V rating and 100 mA current limits exceed the maximum operational stresses of the intended circuit environment.
This device belongs to the NHUMH1 series within Nexperia's portfolio of resistor-equipped double transistors. It serves as a direct replacement for standard discrete double transistor configurations, offering a simplified design alternative to the BC846 series while maintaining high performance in small form-factor applications.
NHUMB1 (PNP/PNP complement)
Both bias resistors R1 and R2 have a nominal value of 22 kΩ.
Yes, the NHUMH1F is qualified according to the AEC-Q101 standard for discrete semiconductors.
The maximum collector-emitter voltage (VCEO) is 80 V.