NHUMH1F

NHUMH1F

$0.25
  • Description:TRANS PREBIAS 2NPN 80V 6TSSOP
  • Series:-

SKU:381a3fa95d12 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 80V 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:170MHz
  • Power - Max:350mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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NHUMH1F

Overview

The Nexperia NHUMH1F is an NPN/NPN Resistor-Equipped double Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It features two internally isolated transistors with integrated bias resistors, R1 and R2, both nominally 22 kΩ. The device supports a collector-emitter voltage of 80 V and a continuous output current of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at 10 mA and 5 V, a transition frequency of 170 MHz, and a total power dissipation of 350 mW. It is qualified to AEC-Q101 standards for automotive reliability.

Feature Summary

  • Integrated dual NPN transistors with built-in base and emitter bias resistors
  • High breakdown voltage capability suitable for demanding switching environments
  • AEC-Q101 qualified for automotive application reliability
  • Compact SOT363 package design reducing component count and assembly costs

Applications

  • Digital logic circuits and signal processing
  • Direct control of IC input pins
  • Load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the delivered components match the exact part number designation and marking codes specified in the datasheet to guarantee functional compatibility and quality assurance.

Selection Notes

Select this component when a compact dual NPN solution with fixed biasing is required. Ensure the 22 kΩ resistor values align with the target drive currents. Verify that the 80 V rating and 100 mA current limits exceed the maximum operational stresses of the intended circuit environment.

Part Context

This device belongs to the NHUMH1 series within Nexperia's portfolio of resistor-equipped double transistors. It serves as a direct replacement for standard discrete double transistor configurations, offering a simplified design alternative to the BC846 series while maintaining high performance in small form-factor applications.

Replacement Considerations

NHUMB1 (PNP/PNP complement)

FAQ

What are the nominal resistance values for R1 and R2?

Both bias resistors R1 and R2 have a nominal value of 22 kΩ.

Is this component suitable for automotive electronics?

Yes, the NHUMH1F is qualified according to the AEC-Q101 standard for discrete semiconductors.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 80 V.

NHUMH1FNHUMH1F
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