NHUMH1X

Overview

The Nexperia NHUMH1X is an NPN/NPN Resistor-Equipped double Transistor (RET) housed in a SOT363 (SC-88) surface-mounted package. It integrates two NPN transistors with built-in bias resistors, each rated at 22 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a maximum output current (IO) of 100 mA per transistor, and a total power dissipation (Ptot) of 350 mW. The device features a transition frequency (fT) of 170 MHz and a collector-emitter saturation voltage (VCEsat) of 100 mV. It operates within an ambient temperature range of -55 °C to +150 °C and is qualified under the AEC-Q101 standard.

Feature Summary

• Integrates dual NPN transistors with built-in 22 kΩ bias resistors to simplify circuit design and reduce component count.
• High breakdown voltage capability of 80 V for robust operation in demanding environments.
• AEC-Q101 qualified for automotive applications, ensuring reliability and quality standards.
• Compact SOT363 (SC-88) package minimizes board space and reduces pick-and-place costs.

Applications

• Digital logic applications
• Cost-effective alternative to BC846 series in digital circuits
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct resistor values and packaging options. Confirm that the SOT363 footprint matches your PCB layout requirements. Check for any recent product change notifications or longevity program updates from Nexperia before finalizing procurement plans.

Selection Notes

Select the NHUMH1X when a dual NPN configuration with integrated base resistors is required to save board space. Ensure the 22 kΩ internal resistance aligns with your drive signal requirements. Verify that the 80 V rating and 100 mA current capacity meet your application's peak load conditions. Consider the AEC-Q101 qualification if the design targets automotive electronics.

Part Context

The NHUMH1X belongs to the NHUMH11/1/2 series of NPN/NPN resistor-equipped double transistors. This family shares the same SOT363 package and general electrical characteristics but differs in the value of the built-in bias resistors. The NHUMH11 variant uses 10 kΩ resistors, while the NHUMH2 uses 47 kΩ resistors, offering flexibility for different input drive levels.

Replacement Considerations

Direct functional replacements within the same series include NHUMH11 and NHUMH2, provided the resistor values are acceptable. For pin-compatible alternatives with different resistor values, consider the NHUMB1 (PNP/PNP complement). Verify thermal performance and package dimensions when substituting with other SOT363 devices.

FAQ

What is the value of the built-in bias resistors in the NHUMH1X?

The NHUMH1X features two built-in bias resistors, R1 and R2, both with a nominal value of 22 kΩ.

Is the NHUMH1X suitable for automotive applications?

Yes, the NHUMH1X is qualified according to the AEC-Q101 standard, making it suitable for use in automotive electronics.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) for the NHUMH1X is 80 V.