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The NHUMH2-QX is a dual NPN pre-biased transistor array manufactured by Nexperia USA Inc. It integrates two NPN bipolar junction transistors with built-in biasing resistors in a compact 6-TSSOP surface-mount package. The device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 100mA. Internal base and emitter resistors are both specified at 47 kΩ. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 10mA and 5V, a saturation voltage of 100mV at 500µA base and 10mA collector current, and a transition frequency of 170MHz. Maximum power dissipation is rated at 350mW.
Verify the specific suffix 'Q' indicates automotive grade qualification against the official Nexperia datasheet. Confirm the package type matches the required PCB footprint. Ensure the ordering code aligns with the desired tape-and-reel or cut-tape packaging format from authorized distributors.
Select this component when a dual NPN pre-biased solution is needed with high voltage tolerance up to 80V. The integrated 47kΩ resistors reduce board space and design complexity compared to discrete resistor-transistor combinations. Verify thermal constraints allow for 350mW dissipation in the target application environment.
This part belongs to the NHUMH2 series of pre-biased transistor arrays. The 'Q' suffix typically denotes automotive grade qualification under AEC-Q101 standards, distinguishing it from standard commercial variants. It shares the same internal architecture as other members in the NHUMH2 family but meets stricter reliability requirements.
Check for direct substitutes within the NHUMH2 series such as NHUMH2X. Verify pin compatibility and electrical parameters match exactly. Automotive applications may require equivalent AEC-Q101 qualified parts from other manufacturers if supply constraints exist.