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The Nexperia NHUMH2F is an NPN/NPN Resistor-Equipped double Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It features built-in bias resistors of 47 kΩ each, providing a collector-emitter voltage rating of 80 V and an output current capability of 100 mA per transistor. The device exhibits a DC current gain (hFE) of at least 100 at 10 mA and 5 V, with a transition frequency of 170 MHz. Total power dissipation reaches 350 mW, and the unit is qualified to AEC-Q101 automotive standards.
Verify the specific suffix 'F' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering code matches the required quantity format for automated assembly lines. Cross-reference the marking code '6L' on received components to validate authenticity and traceability within the supply chain.
Select this RET variant when a 47 kΩ base resistance is required for NPN switching applications. Compare the 80 V rating against standard 50 V alternatives if higher voltage tolerance is necessary. Consider the SOT363 footprint constraints and thermal derating curves for high-density PCB layouts operating above 25 °C ambient temperatures.
This component belongs to the NHUMH1/1/2 series of resistor-equipped double transistors. It serves as the NPN counterpart to PNP variants like the NHUMB2. The family shares the compact SOT363 package but differs in internal resistor values and complementary configurations, offering designers flexibility in digital interface design without increasing board space.
Publicly confirmed substitutes include other Nexperia NPN/NPN RETs in SOT363 packages with similar electrical characteristics. Verify pin compatibility and resistor values before substitution. Generic BJT replacements may require external biasing components, altering the original design intent.