NHUMH9-QX

Overview

The NHUMH9-QX is a dual NPN pre-biased transistor array manufactured by Nexperia USA Inc. It integrates two NPN bipolar junction transistors with built-in biasing resistors in a compact 6-TSSOP surface-mount package. The device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 100mA per transistor. Internal resistor values are specified as R1 (base) at 10 kΩ and R2 (emitter) at 47 kΩ. Key electrical parameters include a DC current gain (hFE) minimum of 100 at 10mA/5V, a transition frequency (fT) of 170MHz, and a saturation voltage of 100mV at 500µA base current and 10mA collector current. The component is rated for a maximum power dissipation of 350mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrated dual NPN configuration with fixed biasing resistors simplifies circuit design by reducing external component count.
• Automotive-grade qualification ensures reliability and compliance with AEC-Q101 standards for harsh environments.
• Compact 6-TSSOP packaging supports high-density surface-mount assembly on printed circuit boards.

Applications

• Automotive logic level shifting and signal switching
• General-purpose digital switching circuits
• Interface drivers for microcontroller output expansion

Procurement Notes

Verify the specific suffix 'Q' indicates automotive grade qualification against the official Nexperia datasheet before procurement. Confirm that the 6-TSSOP footprint matches the target PCB layout dimensions. Ensure supply chain sources provide original manufacturer documentation to validate authenticity and traceability for automotive applications.

Selection Notes

Select this component when a dual NPN solution with integrated biasing is required for space-constrained designs. Verify that the 80V voltage rating and 100mA current limit meet the load requirements. Consider the 10kΩ/47kΩ internal resistor values to ensure compatibility with the driving logic levels and desired switching speeds without additional external components.

Part Context

The NHUMH9-QX belongs to the NHUMH9 series of pre-biased transistor arrays from Nexperia. This series is designed to replace multiple discrete components, offering a simplified alternative to standard BJT configurations. The 'Q' suffix typically denotes automotive-grade variants within the Nexperia portfolio, distinguishing them from standard commercial grades while sharing similar electrical characteristics.

Replacement Considerations

Check for direct substitutes such as the NHUMH9 or other Nexperia dual NPN pre-biased arrays in the SOT-363/6-TSSOP package. Verify pinout compatibility and identical resistor values (10kΩ/47kΩ) to ensure functional equivalence without redesigning the surrounding circuitry.

FAQ

What are the internal resistor values for the NHUMH9-QX?

The device includes a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ for each NPN transistor.

Is the NHUMH9-QX qualified for automotive applications?

Yes, the NHUMH9-QX is AEC-Q101 qualified, making it suitable for automotive electronic systems.

What is the maximum operating temperature for this component?

The NHUMH9-QX is specified for operation up to a maximum junction temperature of +150°C.