NHUMH9X

Overview

The NHUMH9X is an NPN/NPN Resistor-Equipped double Transistor (RET) from Nexperia, housed in a SOT363 (SC-88/TSSOP6) surface-mount package. It features two internally isolated NPN transistors with integrated bias resistors: R1 = 10 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a maximum output current (IO) of 100 mA per transistor, and a total power dissipation (Ptot) of 350 mW at Tamb ≤ 25 °C. The device exhibits a DC current gain (hFE) of at least 100 at IC = 10 mA and VCE = 5 V, with a transition frequency (fT) of 170 MHz.

Feature Summary

• Integrates dual NPN transistors with built-in base and emitter resistors to simplify circuit design and reduce component count.
• Provides high breakdown voltage capability suitable for demanding switching applications.
• Offers cost-saving advantages by reducing pick-and-place operations compared to discrete solutions.

Applications

• Digital logic applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the non-automotive qualification status aligns with the target application requirements, as automotive-grade alternatives may be required for critical systems.

Selection Notes

Select the NHUMH9X when a dual NPN configuration with a 10 kΩ base resistor is required within a compact SOT363 footprint. Ensure the 80 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Verify thermal management capabilities, as the total power dissipation is limited to 350 mW under standard board mounting conditions.

Part Context

The NHUMH9X belongs to the NHUMH10/13/9 series of NPN/NPN resistor-equipped double transistors. It serves as a compact alternative to discrete transistor pairs, sharing the same SOT363 package and general characteristics with variants like NHUMH10 and NHUMH13, which differ primarily in their internal bias resistor values.

Replacement Considerations

Direct functional substitutes within the same family include NHUMH10 and NHUMH13, though they feature different R1 values (2.2 kΩ and 4.7 kΩ respectively). For PNP/PNP configurations, consider the NHUMB9. Cross-family replacements require careful verification of pinout compatibility and electrical ratings.