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Product Detailed Parameters
- Description:IC PWR DRIVER N-CHANNEL 1:1 DPAK
- Series:HDPlus™
- Mfr:onsemi
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:60V (Max)
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):6.5A
- Rds On (Typ):185mOhm
- Input Type:Non-Inverting
- Features:Auto Restart, Slew Rate Controlled
- Fault Protection:Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
- Grade:-
- Qualification:-
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Overview
The NID6002NT4 is a single N-channel power MOSFET from the HDPlus series by onsemi. It features a 65 V drain-source voltage rating and a 6.5 A continuous drain current capability. The device integrates self-protection mechanisms, including thermal shutdown with automatic restart and short-circuit current limiting. An integrated Drain-to-Gate clamp provides avalanche energy withstand and overvoltage protection, while a Gate-to-Source clamp offers ESD protection. These smart features enhance reliability in demanding power switching applications.
Feature Summary
- Integrated thermal shutdown with automatic restart for enhanced safety
- Short circuit protection via built-in current limiting
- Drain-to-Gate clamp for avalanche energy handling and transient suppression
- Gate-to-Source clamp providing electrostatic discharge protection
Applications
- High-reliability DC-DC converter circuits
- Power distribution units requiring fault protection
- Automotive electronic control modules
- Industrial motor drive interfaces
Procurement Notes
Verify the complete part number suffix to ensure correct packaging and lead-free status. Confirm that the specific variant matches the required tape-and-reel configuration for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to validate pinout compatibility and electrical specifications before finalizing procurement orders.
Selection Notes
Select this component when design requirements demand integrated fault protection within a discrete MOSFET form factor. The HDPlus technology offers low on-resistance per silicon area, improving efficiency. Consider the integrated clamping features if the application environment presents high voltage transients or requires simplified external protection circuitry compared to standard MOSFETs.
Part Context
This device belongs to onsemi's HDPlus advanced power MOSFET series. These devices utilize proprietary process technology to minimize on-resistance while embedding smart protection features. The series is designed to replace multiple discrete components by integrating protection logic directly into the power switch, reducing board space and system complexity.
Replacement Considerations
Check for NID6002NT4G as a potential equivalent variant. Verify package dimensions and pin assignments against existing designs. Ensure thermal management solutions accommodate the specific power dissipation characteristics of the replacement unit.
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