NID6002NT4G

Overview

The NID6002NT4G is a single N-channel power MOSFET from the HDPlus series, manufactured by onsemi. It features a 65 V drain-source breakdown voltage and a continuous drain current of 6.5 A. The device incorporates integrated thermal shutdown with automatic restart and short-circuit protection via current limiting. An integrated Drain-to-Gate clamp withstands high avalanche energy, while a Gate-to-Source clamp provides ESD protection. It utilizes advanced silicon technology to minimize on-resistance per unit area.

Feature Summary

• Integrated thermal shutdown with automatic restart capability for enhanced reliability under fault conditions
• Built-in short-circuit protection and current limiting mechanisms to safeguard against overcurrent events
• Integrated Drain-to-Gate clamp designed to withstand high energy in avalanche mode and suppress voltage transients
• Gate-to-Source electrostatic discharge (ESD) clamp providing internal protection against static damage

Applications

• Power switching applications requiring integrated fault protection
• Systems needing robust avalanche energy handling capabilities
• Circuits benefiting from slew rate control for low noise switching performance

Procurement Notes

Verify the complete part number including the suffix 'T4G' to ensure correct packaging and lead-free compliance. Confirm that the specific revision matches the required thermal and electrical specifications. Check for any obsolescence notices or lifecycle status updates directly from onsemi documentation before finalizing procurement plans.

Selection Notes

Select this component when design requirements demand a single N-channel MOSFET with built-in smart features rather than discrete protection circuits. It is suitable for designs prioritizing board space efficiency through integrated thermal and current limits. Ensure the 65 V rating and 6.5 A current capacity align with the specific load and voltage transient conditions of the target application.

Part Context

This device belongs to the HDPlus series of power MOSFETs from onsemi. These devices utilize advanced silicon processes to achieve low on-resistance per silicon area. The series is characterized by the inclusion of smart features such as integrated clamps and protection logic, distinguishing it from standard power MOSFETs that require external protection components.

Replacement Considerations

Direct substitutes must match the 65 V, 6.5 A N-channel specification and include similar integrated protection features. Verify pinout compatibility and package dimensions (DPAK) for mechanical fit. Cross-reference datasheets for equivalent avalanche energy ratings and thermal shutdown thresholds to ensure functional parity.