NIF5002NT1

Overview

The NIF5002NT1G is an N-channel enhancement mode MOSFET from onsemi, designed for surface-mount applications in the SOT-223 package. It features a maximum drain-source voltage of 42 V and a continuous drain current of 2 A. The device exhibits a maximum drain-source resistance of 200 mΩ and a power dissipation rating of 1.7 W. It operates within a temperature range of -55 °C to +150 °C, with a maximum gate-source voltage of ±14 V.

Feature Summary

• N-channel enhancement mode configuration
• SOT-223 surface-mount packaging
• High thermal stability up to +150 °C

Applications

• General-purpose switching circuits
• Low-voltage power management systems
• Battery protection modules

Procurement Notes

Verify the specific ordering suffix (e.g., 'G' for lead-free/RoHS compliance) when placing orders, as the base model number may refer to multiple variants. Confirm that the SOT-223 footprint matches your PCB design requirements. Ensure the 42 V rating aligns with your circuit's peak voltage stresses to prevent breakdown.

Selection Notes

Select this component for low-voltage applications requiring moderate current handling in a compact form factor. The 200 mΩ Rds(on) offers reasonable efficiency for general switching tasks. Consider the 1.7 W power dissipation limit and ensure adequate thermal management on the PCB copper area to maintain junction temperatures within safe operating limits during continuous operation.

Part Context

This part belongs to onsemi's discrete MOSFET portfolio, specifically targeting cost-sensitive consumer and industrial electronics. The SOT-223 package provides a balance between thermal performance and board space efficiency compared to smaller packages like SOT-23, making it suitable for slightly higher power density applications than ultra-miniaturized alternatives.

Replacement Considerations

Direct substitutes include other 42 V, 2 A N-channel MOSFETs in SOT-223 packages from manufacturers such as Nexperia or Vishay. Verify pinout compatibility and thermal characteristics before substitution. Generic equivalents may vary in Rds(on) and gate charge specifications.