NIF5002NT1G

NIF5002NT1G

$1.03
  • Description:IC PWR DRIVER N-CHAN 1:1 SOT223
  • Series:HDPlus™
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:608bb269791b Category: Brand:

  
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Product Detailed Parameters

  • Description:IC PWR DRIVER N-CHAN 1:1 SOT223
  • Series:HDPlus™
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Type:General Purpose
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:Low Side
  • Output Type:N-Channel
  • Interface:On/Off
  • Voltage - Load:42V (Max)
  • Voltage - Supply (Vcc/Vdd):Not Required
  • Current - Output (Max):2A
  • Rds On (Typ):165mOhm
  • Input Type:Non-Inverting
  • Features:Auto Restart, Slew Rate Controlled
  • Fault Protection:Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223 (TO-261)
  • Package / Case:TO-261-4, TO-261AA
  • Grade:-
  • Qualification:-

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NIF5002NT1G

Overview

The NIF5002NT1G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 42 V and a continuous drain current (Id) of 2 A. The device is housed in a surface-mount SOT-223 package with four pins. Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 200 mΩ and a maximum power dissipation of 1.7 W. The gate-source voltage rating is ±14 V, and the component operates within a temperature range of -55 °C to +150 °C.

Feature Summary

  • N-channel enhancement mode construction for efficient switching applications
  • Low on-resistance characteristic to minimize conduction losses
  • Robust thermal performance with high junction temperature capability
  • Surface-mount SOT-223 packaging for compact board integration

Applications

  • DC-DC converter circuits
  • Load switching applications
  • Power management modules

Procurement Notes

Verify the complete part number including the suffix 'T1G' to ensure correct tape-and-reel packaging configuration. Confirm that the SOT-223 footprint matches the design layout. Check for RoHS compliance markings as indicated by the 'G' suffix. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during soldering processes.

Selection Notes

Select this component when a low-voltage, moderate-current N-channel switch is required in a compact surface-mount form factor. The 42 V rating suits low-side switching in 12 V or 24 V systems. Evaluate the 200 mΩ Rds(on) against thermal constraints to ensure adequate heat dissipation without additional heatsinking. Compare pinout compatibility with existing PCB layouts before finalizing the design choice.

Part Context

This device belongs to onsemi's portfolio of discrete power MOSFETs designed for general-purpose switching. The SOT-223 package provides a balance between current handling capacity and board space efficiency. It serves as a fundamental building block in modern electronic power stages where reliable low-voltage control and efficient energy transfer are critical requirements.

Replacement Considerations

Consult official cross-reference lists for verified equivalents. Ensure any substitute maintains identical pinout, voltage ratings, and package dimensions. Verify thermal resistance values match original specifications to avoid overheating issues in the final assembly.

NIF5002NT1GNIF5002NT1G
$1.03
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