NIF5002NT3

Overview

The NIF5002NT3G is a single N-channel enhancement mode MOSFET from onsemi's HDPlus series, housed in a SOT-223 surface-mount package. It features a drain-source breakdown voltage of 42 V and a continuous drain current rating of 2 A at room temperature. The device exhibits a maximum on-resistance of 200 mΩ. Integrated protection mechanisms include thermal shutdown with automatic restart and current limiting for short-circuit defense. An integrated drain-to-gate clamp provides avalanche energy capability and transient overvoltage protection, while gate-to-source clamping ensures electrostatic discharge safety.

Feature Summary

• Integrated thermal shutdown with automatic restart functionality
• Built-in current limitation for short-circuit protection
• Drain-to-gate clamp for avalanche energy handling
• Gate-to-source clamp for electrostatic discharge protection

Applications

• Lighting systems
• Solenoid drivers
• Small motor control circuits

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics match your design requirements. Confirm RoHS compliance status and moisture sensitivity level prior to assembly planning. Ensure the ordering code corresponds exactly to the required tape-and-reel quantity or cut-tape availability. Cross-reference the manufacturer's latest documentation for any revisions that may affect mechanical dimensions or performance parameters.

Selection Notes

Select this component when designing circuits requiring self-protected power switching for low-voltage loads. The integrated thermal and current limits simplify protection circuitry compared to standard discrete MOSFETs. Consider the SOT-223 package for applications needing moderate current handling with efficient heat dissipation. Evaluate the 42 V rating to ensure adequate headroom for system voltage spikes and operational transients.

Part Context

This part belongs to onsemi's HDPlus series of advanced power MOSFETs. These devices utilize proprietary technology to minimize on-resistance per silicon area. The series integrates smart features typically found in dedicated power switches, combining high-efficiency switching with robust protection mechanisms in a compact form factor suitable for space-constrained designs.

Replacement Considerations

The NIF5002NT1G is a documented substitute within the same family offering identical self-protected FET characteristics. Verify package compatibility and lead configuration before substitution. Ensure the replacement maintains the required 42 V breakdown voltage and 2 A current ratings for the specific application load.