NIF5002NT3G

Overview

The NIF5002NT3G is a self-protected single N-channel power MOSFET from onsemi's HDPlus series, housed in an SOT-223 package. It features a drain-source breakdown voltage of 42 V and a continuous drain current of 2 A. The device integrates thermal shutdown with automatic restart and current limitation for short circuit protection. An integrated Drain-to-Gate clamp withstands high avalanche energy, while a Gate-to-Source clamp provides ESD protection. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Integrated thermal shutdown with automatic restart capability
• Current limitation for short circuit protection
• Integrated Drain-to-Gate clamp for avalanche energy handling
• Gate-to-Source clamp for electrostatic discharge protection

Applications

• Lighting systems
• Solenoid control
• Small motor drives

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the ordering information matches the exact part number variant required for your design.

Selection Notes

Select this component when designing circuits requiring built-in protection against overcurrent and overheating conditions. The integrated safety features reduce the need for external protection components. Consider the SOT-223 package constraints for thermal management and PCB layout space availability.

Part Context

This device belongs to the NIF5002N family of self-protected FETs. These devices utilize advanced MOSFET technology to achieve low on-resistance per silicon area. The series incorporates smart features like slew rate control for low noise switching and overvoltage clamped protection alongside standard power switching capabilities.

Replacement Considerations

Consult official substitution guides for compatible parts within the same self-protected MOSFET family. Verify pinout compatibility and electrical parameter equivalence before replacing.