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Product Detailed Parameters
- Description:IC PWR DRIVER N-CHAN 1:1 SOT223
- Series:HDPlus™
- Mfr:onsemi
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:42V (Max)
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):14A
- Rds On (Typ):53mOhm
- Input Type:Non-Inverting
- Features:Auto Restart, Slew Rate Controlled
- Fault Protection:Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:-
- Qualification:-
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Overview
The NIF5003NT3G is a single N-channel enhancement mode MOSFET manufactured by onsemi using silicon technology. It features a SOT-223-3 surface-mount package and operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a drain-source breakdown voltage (Vds) of 42 V, a continuous drain current (Id) of 14 A, and a maximum gate-source voltage (Vgs) of 14 V. The device exhibits a typical on-resistance (Rds(on)) of 53 mΩ and a power dissipation rating of 1.25 W.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching control
- Low on-resistance design to minimize conduction losses in power paths
- Robust thermal performance supporting operation up to 150°C junction temperature
- Surface-mount SOT-223-3 packaging optimized for automated assembly
Applications
- General-purpose low-side switching applications
- Power management circuits requiring high current handling
- Battery protection and load switch designs
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the official datasheet before procurement. Confirm moisture sensitivity level (MSL) requirements and pre-use baking procedures if the component has exceeded its floor life. Ensure the supplier provides valid RoHS compliance documentation and material composition declarations as required by your manufacturing standards.
Selection Notes
Select this component when a single N-channel MOSFET with 42 V voltage rating and 14 A current capacity is required in a SOT-223 package. Consider the 53 mΩ on-resistance for efficiency calculations and verify that the 14 V maximum gate-source voltage aligns with your driver output levels. Evaluate thermal management needs based on the 1.25 W power dissipation limit in your specific enclosure environment.
Part Context
This part belongs to the NIF5003N series of N-channel MOSFETs from onsemi. It is designed for general power switching applications where moderate voltage ratings and high current capability are necessary. The SOT-223-3 package provides a balance between thermal performance and board space efficiency compared to larger through-hole packages.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains or improves upon the 53 mΩ on-resistance and 14 A current rating while fitting the SOT-223-3 footprint.
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