NIF62514T1

Overview

The NIF62514T1 is a self-protected N-channel MOSFET transistor manufactured by onsemi. It integrates protection mechanisms for temperature and current limiting within a single component. The device supports a drain-source voltage of 40 V and conducts up to 6 A. Its on-resistance is specified at 0.09 ohms when driven at a gate voltage of 10 V, with a threshold voltage of 1.7 V. Packaged in an SOT-223-4 or TO-261-4D configuration, it is designed for robust power management applications requiring integrated fault protection.

Feature Summary

• Integrates self-protection features including temperature and current limiting
• N-channel enhancement mode MOSFET construction
• Designed for high reliability in power switching applications

Applications

• Power management systems
• Industrial control circuits
• Automotive electronics

Procurement Notes

Verify the specific ordering suffix (e.g., T1G) to ensure compliance with RoHS directives and correct packaging specifications. Confirm that the required thermal performance aligns with the SOT-223-4 package capabilities for your intended heat dissipation requirements. Cross-reference the datasheet revision date to ensure all electrical characteristics match your design constraints before finalizing procurement orders.

Selection Notes

Select this component when a compact solution combining power switching and integrated fault protection is required. The 40 V rating suits low-voltage DC applications. Ensure the drive circuit can provide sufficient gate voltage to achieve the specified 0.09 ohm on-resistance. Consider the thermal resistance of the SOT-223-4 package relative to the expected load current and ambient operating conditions to maintain safe junction temperatures.

Part Context

This part belongs to onsemi's lineup of intelligent power devices that combine discrete semiconductor functions with built-in protection logic. It serves as a bridge between standard MOSFETs and complex driver ICs, offering simplified board design by eliminating external protection components. The technology focuses on enhancing system reliability in space-constrained environments.

Replacement Considerations

Check for direct substitutes such as the NIF62514T1G variant which may differ only in packaging or environmental compliance. Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' self-protected FETs.

FAQ

What type of protection does the NIF62514T1 include?

It includes self-protection against over-temperature and over-current conditions.

What is the maximum drain-source voltage for this device?

The maximum drain-source voltage is 40 V.