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Product Detailed Parameters
- Description:MOSFET N-CH 52V 2.6A SOT223
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:50.8V ~ 59.5V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):2.6A
- Rds On (Typ):107mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:-
- Qualification:-
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Overview
The NIF9N05CLT1 is a single N-channel power MOSFET manufactured by onsemi, designed for general-purpose switching applications. It features a maximum drain-source voltage (V_DSS) of 55 V and a continuous drain current (I_D) of 9 A at 25°C. The device utilizes a lead-free DPAK surface-mount package to facilitate automated assembly. Key electrical characteristics include a typical on-resistance (R_DS(on)) of 90 mΩ at V_GS = 10 V, ensuring efficient power handling with minimal conduction losses. The component operates within a junction temperature range of -55°C to 175°C, providing robust thermal performance for demanding environments.
Feature Summary
- Single N-channel configuration optimized for low-side switching duties
- Integrated ESD protection structures for enhanced signal integrity
- Lead-free DPAK packaging supporting high-volume surface mount production
Applications
- General-purpose power switching circuits
- Load driver applications in industrial control systems
- Automotive electronics requiring AEC-Q101 qualified components
Procurement Notes
Verify the specific suffix 'T1' against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard DPAK footprint designs. Confirm RoHS compliance status as per the latest manufacturer documentation before finalizing procurement plans.
Selection Notes
Select this component when a 55 V, 9 A N-channel MOSFET is required for cost-effective power management. Consider its 90 mΩ on-resistance for efficiency requirements. Verify that the DPAK package fits the available PCB real estate and thermal constraints of the target design.
Part Context
This part belongs to onsemi's portfolio of automotive-grade discrete semiconductors. It serves as a reliable solution for replacing older legacy MOSFETs in existing designs. The device supports various industries including automotive, industrial, and consumer electronics where robust switching performance is essential.
Replacement Considerations
Check for direct pin-compatible alternatives from onsemi or other manufacturers offering similar 55 V, 9 A specifications. Ensure replacement parts match the DPAK package dimensions and thermal resistance values to maintain system reliability without redesigning the PCB layout.
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