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Product Detailed Parameters
- Description:MOSFET N-CH 59V 2.6A SOT223
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:50.8V ~ 59.5V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):2.6A
- Rds On (Typ):107mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:-
- Qualification:-
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Overview
The NIF9N05CLT1G is an N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 9 A at 25°C case temperature. The device utilizes SuperSO-8L surface-mount packaging to facilitate efficient thermal management in compact designs. Key electrical characteristics include a low on-state resistance (Rds(on)) optimized for logic-level gate drive voltages, ensuring minimal conduction losses during operation.
Feature Summary
- Integrated ESD protection diodes for enhanced circuit robustness
- Logic-level gate drive capability for direct microcontroller interfacing
- SuperSO-8L package design for improved thermal dissipation
Applications
- DC-DC converter output stages
- Load switching applications
- Power management integrated circuits (PMICs)
Procurement Notes
Verify the specific suffix 'LT1G' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact pinout and thermal pad configuration required for your PCB layout. Cross-reference with the latest onsemi documentation to validate any recent manufacturing site changes or material updates.
Selection Notes
Select this component when designing low-voltage power stages requiring integrated transient protection. The SuperSO-8L package offers a superior thermal profile compared to standard SO-8 variants. Verify that the application's peak current demands remain within the safe operating area defined in the datasheet's thermal impedance curves to prevent junction overheating.
Part Context
This device belongs to onsemi's NIF series of protected power MOSFETs. These components are engineered specifically for automotive and industrial environments where voltage spikes and electrostatic discharge events are common. The integration of internal clamping diodes reduces the need for external protection components, simplifying the bill of materials and saving board space.
Replacement Considerations
Consult onsemi's official cross-reference tools for verified substitutes. Ensure any replacement maintains the same 55 V rating, 9 A current capacity, and SuperSO-8L footprint. Verify that alternative parts offer comparable Rds(on) and ESD protection levels to maintain system reliability.
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