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NIMD6001NR2G
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Product Detailed Parameters
- Description：BUFFER/INVERTER PERIPHL DRIVER
- Series：*
- Mfr：onsemi
- Package：Bulk
- Switch Type：-
- Number of Outputs：-
- Ratio - Input:Output：-
- Output Configuration：-
- Output Type：-
- Interface：-
- Voltage - Load：-
- Voltage - Supply (Vcc/Vdd)：-
- Current - Output (Max)：-
- Rds On (Typ)：-
- Input Type：-
- Features：-
- Fault Protection：-
- Operating Temperature：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
- Grade：-
- Qualification：-
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Overview
The NIMD6001NR2G is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications in an 8-SOIC package. It features a drain-source voltage rating of 60V and a continuous drain current of 3.3A at the maximum junction temperature. The device exhibits a maximum on-resistance of 110 milliohms when driven at 10V with a 3.3A load. Key electrical characteristics include a gate charge of 9nC at 5V and an input capacitance of 175pF at 15V. The threshold voltage is specified as 3V maximum at a gate current of 250µA. It operates within a temperature range of -55°C to 150°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration integrated into a single compact surface-mount package
- Automotive-grade reliability certified under the AEC-Q101 standard
- Low on-resistance performance optimized for efficient power switching
- Wide operating temperature range suitable for demanding thermal environments
Applications
- Automotive power management systems requiring qualified components
- General-purpose low-voltage switching circuits
- Industrial control applications utilizing surface-mount technology
- Battery protection modules within automotive or portable devices
Procurement Notes
Verify component authenticity through authorized onsemi distributors or certified supply chain partners. Confirm that the specific part number matches the required automotive grade specifications. Check current availability status as supply conditions may vary. Ensure storage and handling procedures comply with moisture sensitivity levels for SOIC packages. Validate that the received units meet all electrical parameters defined in the official datasheet before integration.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for 60V applications. Consider the 8-SOIC package for space-constrained designs needing surface-mount assembly. Evaluate the 110 milliohm on-resistance against thermal dissipation requirements. Verify compatibility with logic-level drive voltages if lower gate thresholds are necessary. Ensure the automotive qualification aligns with target industry standards.
Part Context
This device belongs to the onsemi family of discrete semiconductor products, specifically categorized under FET arrays. It utilizes metal-oxide-semiconductor technology to provide dual-channel functionality. The product is engineered for robust performance in electronic systems where reliable switching and low conduction losses are critical. It represents a specialized solution for integrating multiple switching elements into a single footprint.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence when evaluating alternative sources. Consult official manufacturer resources for potential obsolescence notices or recommended upgrades.
