NJG1157PCD-TE1

RF Amplifiers Overview

The NJG1157PCD-TE1 is a GPS and GLONASS RF Front End Module (FEM) designed for GNSS applications. It operates within the frequency range of 1.575 GHz to 1.606 GHz, supporting standard L1 band signals. The component provides a gain of 18.5 dB with a noise figure of 1.7 dB, ensuring efficient signal amplification. It functions on a supply voltage of 1.5 V to 3.3 V and maintains performance across an operating temperature range from -40°C to +105°C. Built on silicon technology, it is housed in a module package suitable for surface mount integration.

RF Amplifiers Feature Summary

• Integrated front-end solution combining low-noise amplification for GPS and GLONASS bands
• Optimized for high sensitivity reception in global navigation satellite systems
• Supports wide operating voltage range for flexible power supply design

RF Amplifiers Applications

• GNSS receiver modules requiring integrated L1 band processing
• Automotive navigation and telematics systems
• Portable consumer electronics with location tracking capabilities

RF Amplifiers Procurement Notes

Verify current availability status as this component is designated as Not For New Designs (NRND). Confirm that existing inventory meets project requirements before finalizing procurement plans. Check datasheet revisions for any last-time buy notifications or end-of-life announcements from Nisshinbo Micro Devices Inc. to ensure long-term supply chain stability for production runs.

RF Amplifiers Selection Notes

Select this part when a compact, integrated FEM is required for GPS and GLONASS L1 band reception. The 18.5 dB gain and 1.7 dB noise figure are critical for maintaining link budget in weak signal environments. Ensure the application supports the specified 1.5 V to 3.3 V operating voltage range and thermal conditions up to 105°C. This module simplifies PCB layout by integrating necessary RF stages into a single package.

RF Amplifiers Part Context

This device belongs to the NJG115xP series of radio frequency components manufactured by Nisshinbo Micro Devices Inc. It is categorized under wireless and RF integrated circuits, specifically targeting GNSS front-end applications. The module utilizes silicon technology to deliver performance metrics suitable for modern navigation systems, distinguishing it from discrete amplifier solutions by offering a consolidated functional block.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the part is marked NRND, engineers should evaluate alternative GNSS FEMs from the same manufacturer or other suppliers that support GPS/GLONASS L1 bands with comparable gain and noise specifications.