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Product Detailed Parameters
- Description:1-CHANNEL HIGH SIDE SWITCH
- Series:-
- Mfr:Nisshinbo Micro Devices Inc.
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:P-Channel
- Interface:-
- Voltage - Load:0V ~ 40V
- Voltage - Supply (Vcc/Vdd):4.6V ~ 40V
- Current - Output (Max):200mA
- Rds On (Typ):750mOhm
- Input Type:Non-Inverting
- Features:Status Flag
- Fault Protection:Current Limiting (Fixed), Over Temperature
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Surface Mount
- Supplier Device Package:6-DFN (1.6x1.6)
- Package / Case:6-XFDFN Exposed Pad
- Grade:-
- Qualification:-
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Overview
The NJW4832KH1-A-TE3 is a single-channel high-side MOSFET gate driver from Nisshinbo Micro Devices, housed in a DFN-6 surface-mount package. It operates with a supply voltage range of 4.6 V to 40 V and accepts logic inputs between 0 V and 5.5 V. The device provides a peak output current of 200 mA and features a non-inverting configuration. Key electrical parameters include a maximum operating temperature of +125°C, a quiescent supply current of 150 µA, and an internal on-resistance of 1.2 Ohms.
Feature Summary
- Single-channel high-side switching capability for direct MOSFET control
- Wide input voltage tolerance supporting both low-voltage logic and high-side power domains
- Non-inverting signal path for straightforward interface integration
Applications
- High-side switch control in automotive electronic systems
- Industrial motor drive gate driving applications
- Power management circuits requiring isolated high-side actuation
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's latest datasheet to confirm pinout compatibility and functional specifications. Ensure the DFN-6 package thermal characteristics align with your PCB layout requirements. Confirm RoHS compliance status directly with the supplier documentation prior to finalizing procurement orders.
Selection Notes
Select this component when a single high-side driver with wide common-mode voltage handling is required. The 200 mA output current supports standard power MOSFETs efficiently. Consider the 1.2 Ohm internal resistance for power loss calculations. Verify that the 40 V maximum supply voltage meets the system's bus requirements without exceeding limits.
Part Context
This part belongs to the NJW48 series of gate drivers designed by Nisshinbo Micro Devices. The series includes various configurations such as half-bridge and multi-channel drivers. The NJW4832 specifically targets high-side applications, distinguishing itself from low-side or complementary pairs within the broader product family.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official cross-reference list for verified alternatives.
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