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Product Detailed Parameters
- Description：IC SWITCH SPST-NOX1 25OHM 5TSOP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Switch Circuit：SPST - NO
- Multiplexer/Demultiplexer Circuit：1:01
- On-State Resistance (Max)：25Ohm
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：2V ~ 5.5V
- Voltage - Supply, Dual (V±)：-
- Switch Time (Ton, Toff) (Max)：9ns, 10ns
- -3db Bandwidth：220MHz
- Charge Injection：3pC
- Channel Capacitance (CS(off), CD(off))：10pF, 10pF
- Current - Leakage (IS(off)) (Max)：1nA
- Crosstalk：-
- Operating Temperature：-55°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package：5-TSOP
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The NLAS4501DTT1G is a single N-channel enhancement mode field-effect transistor manufactured by onsemi. It is housed in a compact SOT-363 surface-mount package, which integrates two transistors in a single body to save board space. The device features a drain-source voltage rating of 20 V and a continuous drain current capability of 3.2 A at 25°C ambient temperature. Key electrical parameters include a maximum gate-source voltage of ±12 V and a low on-resistance of 80 mΩ at 4.5 V gate drive. The component operates within a junction temperature range of -55°C to 150°C and is RoHS compliant.
Feature Summary
- Compact dual-transistor integration in a single SOT-363 package for space-constrained designs
- Low on-resistance for efficient power switching with minimal conduction losses
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- DC-DC converter synchronous rectification
- Load switching in portable battery-powered devices
- Power management circuits in mobile phones and tablets
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement channel provides original manufacturer documentation to validate authenticity and traceability. Check for any recent product change notices regarding material composition or manufacturing site updates before finalizing supply agreements.
Selection Notes
Select this component when a small footprint is required for dual-switching applications. Ensure the design accounts for the 20 V drain-source voltage limit and the 3.2 A continuous current rating under specified thermal conditions. Verify that the gate drive voltage aligns with the 4.5 V threshold for optimal on-resistance performance in low-voltage systems.
Part Context
This part belongs to the NTR4501 series of N-channel MOSFETs from onsemi. It shares similar electrical characteristics with other members of the family but differs in package configuration. The SOT-363 variant offers a smaller solution size compared to standard SOT-23 packages, making it suitable for dense PCB layouts in consumer electronics.
Replacement Considerations
Direct replacements must match the 20 V, 3.2 A, N-channel specification and SOT-363 package. Verify pinout compatibility and thermal resistance values. Cross-reference with other manufacturers' equivalent parts ensuring identical electrical ratings and mounting dimensions.
