NLAS5223BMUR2G

NLAS5223BMUR2G

  • Description:IC SWITCH SPDTX2 350MOHM 10UQFN
  • Series:-

SKU:e44c81c2e21d Category: Brand:

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Product Detailed Parameters

  • Description:IC SWITCH SPDTX2 350MOHM 10UQFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Switch Circuit:SPDT
  • Multiplexer/Demultiplexer Circuit:2:01
  • On-State Resistance (Max):350mOhm
  • Channel-to-Channel Matching (ΔRon):50mOhm (Max)
  • Voltage - Supply, Single (V+):1.65V ~ 4.5V
  • Voltage - Supply, Dual (V±):-
  • Switch Time (Ton, Toff) (Max):50ns, 50ns
  • -3db Bandwidth:19MHz
  • Charge Injection:38pC
  • Channel Capacitance (CS(off), CD(off)):60pF
  • Current - Leakage (IS(off)) (Max):500nA
  • Crosstalk:-70dB @ 100kHz
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:10-UFQFN
  • Supplier Device Package:10-UQFN (1.4x1.8)
  • Number of Circuits:2
  • Grade:-
  • Qualification:-

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NLAS5223BMUR2G

Overview

The NLAS5223BMUR2G is a dual independent Single Pole Double Throw (SPDT) analog switch fabricated in sub-micron silicon gate CMOS technology. It operates on a single supply voltage ranging from 1.65 V to 4.5 V and supports full 0-VCC signal handling capability. The device features an ultra-low typical on-resistance of 0.35 Ω at VCC = 4.3 V, with a maximum guaranteed limit of 0.4 Ω at 25°C for the same voltage. It includes large current clamping diodes at analog inputs capable of ±100 mA continuous current and provides high continuous current capability of ±320 mA through each switch. The component is housed in a 1.4 x 1.8 x 0.55 mm UQFN10 package.

Feature Summary

  • Guaranteed Break Before Make switching prevents driver shorting
  • Interfaces directly with 2.8 V chipset logic levels
  • Features low standby current of less than 50 nA
  • Includes large current clamping diodes at analog inputs

Applications

  • Cell phone audio block switching
  • Speaker and earphone switching
  • Ring-tone chip or amplifier switching
  • Modems

Procurement Notes

Verify the specific ordering suffix UR2G to confirm the UQFN10 package variant. Check the manufacturer's official documentation for discontinuation status, as some devices within this family are marked as not recommended for new designs. Ensure compatibility with the required 1.65 V to 4.5 V supply range and temperature specifications before finalizing procurement.

Selection Notes

Select the NLAS5223BMUR2G when a low-profile UQFN10 package is required instead of the standard WQFN10. Confirm that the 2.8 V chipset interface requirements align with the digital input thresholds. Verify that the ±320 mA continuous current rating meets the load requirements, as higher current demands may necessitate alternative components within the series.

Part Context

This component belongs to the NLAS5223B family of ultra-low resistance analog switches. It shares core electrical characteristics with the NLAS5223BMNR2G but differs in physical packaging. The 'B' designation indicates the 2.8 V chipset interface version, distinct from the 'BL' variant designed for 1.8 V interfaces. All variants maintain the dual SPDT architecture and CMOS fabrication process.

Replacement Considerations

The NLAS5223BMNR2G serves as a direct functional substitute if the WQFN10 package is acceptable. For 1.8 V interface applications, the NLAS5223BLMNR2G or NLAS5223BLUR2G should be considered. Verify pinout compatibility and thermal performance when substituting between WQFN and UQFN packages.

NLAS5223BMUR2GNLAS5223BMUR2G

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