NLV14012BDR2G

Overview

The NLV14012BDR2G is a dual 4-input NAND gate constructed with complementary MOS technology. It operates within a supply voltage range of 3.0 Vdc to 18 Vdc and supports an ambient temperature range from -55°C to +125°C. The device features buffered outputs capable of driving low-power TTL loads, double diode protection on all inputs, and AEC-Q100 qualification for automotive applications.

Feature Summary

• Dual 4-input NAND logic gates in a single monolithic structure
• AEC-Q100 qualified with PPAP capability for automotive use
• Double diode protection on all inputs
• Outputs buffered to drive low-power TTL loads

Applications

• Automotive electronic systems requiring unique site control
• General-purpose digital logic circuits
• Low power dissipation applications

Procurement Notes

Verify the specific ordering suffix 'NLV' indicates AEC-Q100 qualification and PPAP capability requirements. Confirm package type matches SOIC-14 specifications. Check current availability status as some variants may be discontinued or subject to long lead times. Ensure compliance with RoHS standards for environmental regulations.

Selection Notes

Select this component when dual 4-input NAND functionality is required in a compact surface-mount package. Consider the wide operating voltage range and high noise immunity characteristics. Verify that the input protection and output drive capabilities meet the specific circuit interface requirements.

Part Context

This part belongs to the MC14012B series of dual 4-input NAND gates manufactured by onsemi. It is designed as a pin-for-pin replacement for corresponding CD4000 series B suffix devices. The NLV prefix specifically denotes automotive-grade qualification and controlled manufacturing sites.

Replacement Considerations

Pin-for-pin replacements are available for corresponding CD4000 series B suffix devices.