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The NMB2227AF is a dual general-purpose transistor array containing one NPN and one PNP bipolar junction transistor (BJT) in an SOT457 (SC-74/TSOP6) surface-mount package. The NPN transistor provides a collector-emitter voltage (VCEO) of 40 V, while the PNP transistor offers -60 V. Both transistors support a maximum continuous collector current of 600 mA. The device features a DC current gain (hFE) ranging from 100 to 300 at 150 mA. Transition frequencies are specified at 300 MHz for the NPN and 200 MHz for the PNP. Total power dissipation reaches 300 mW per device at 25 °C ambient temperature.
Verify the specific suffix 'AF' against the manufacturer's official ordering information to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status directly with the supplier documentation before finalizing procurement orders.
Select this component when space-constrained designs require a matched NPN/PNP pair. Ensure the application voltage does not exceed 40 V for the NPN side or 60 V for the PNP side. Verify that the required switching speed aligns with the 300 MHz transition frequency of the NPN transistor.
This part belongs to Nexperia's portfolio of small-signal general-purpose transistors designed for surface-mount assembly. It serves as a compact alternative to discrete single-transistor implementations, offering integrated complementary pairs within the standardized SOT457 plastic package format.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires independent verification of pinout compatibility and electrical parameter matching.