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The NP0H3A3 is a composite transistor featuring a silicon PNP epitaxial planar type (Tr1) and a silicon NPN epitaxial planar type (Tr2) within an SSS-Mini6-F1 package. It provides a maximum collector-emitter voltage of ±50 V, a collector current of ±80 mA, and a total power dissipation of 125 mW at 25°C. The device includes internal resistors with a nominal value of 47 kΩ and a ratio of 1.0. Transition frequencies are specified at 150 MHz for the PNP section and 80 MHz for the NPN section.
Verify component status before design finalization as lifecycle stages may include planned maintenance or discontinuation. Consult official manufacturer channels for current availability and updated specifications. Ensure compliance with RoHS directives and handle according to electrostatic discharge precautions during storage and assembly processes.
Select this component when space constraints require a dual-transistor solution in a minimal footprint. Verify that the ±50 V voltage rating and ±80 mA current limits meet circuit requirements. Consider the specific transition frequency characteristics of each transistor section for high-speed signal processing needs.
This part belongs to Panasonic's composite transistor series designed for digital applications. It integrates two distinct transistor types into one housing, offering a cost-effective alternative to discrete components while maintaining standard electrical performance metrics for general-purpose electronics.
The datasheet identifies UNR11A3 and UNR12A3 as basic part number equivalents. Verify pinout compatibility and electrical parameters against these identifiers before substitution.
The maximum package height is 0.4 mm.
The input resistance R1 has a typical value of 47 kΩ with a tolerance of ±30%.
No, the datasheet specifies it is intended for standard applications like office and communications equipment, not for special applications requiring exceptional reliability such as aerospace.