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The NRVBD660CTT4 is a Schottky barrier rectifier diode array manufactured by onsemi. It features a common cathode configuration with two elements housed in a surface-mount TO-252-3 (DPAK) package. The device is rated for a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 3 A. Key electrical specifications include a maximum DC reverse leakage current of 10 mA at the rated voltage and a typical junction capacitance of 18 pF. The component operates within a temperature range of -55°C to 175°C, ensuring reliability in high-temperature environments.
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees. Confirm that the received components match the exact part number designation without unauthorized modifications or alternate branding.
Select this component when a compact surface-mount solution is required for medium-current applications. The DPAK package offers thermal performance suitable for space-constrained designs. Consider the 60V rating and 3A current capacity to ensure adequate headroom for the target load conditions and transient events.
This device belongs to the NRVBD series of Schottky barrier rectifiers from onsemi. The series utilizes advanced silicon planar technology to deliver robust performance in power conversion systems. The product line is designed to meet the demands of modern electronics requiring high efficiency and reliable operation under varying thermal conditions.
Consult official cross-reference data for verified substitutes. Generic equivalents may differ in thermal resistance or switching characteristics. Validate any alternative part number against the original datasheet parameters before implementation.