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The NRVSRD620VCTT4RG is a silicon Schottky rectifier diode array manufactured by onsemi. It features a dual common anode configuration housed in a surface-mount TO-252 (DPAK) package with three terminals. The device supports a maximum repetitive peak reverse voltage of 200 V and a continuous forward current of 6 A. Key electrical specifications include a maximum forward voltage of 1.3 V, a peak non-repetitive forward surge current of 45 A, and a typical reverse recovery time of 75 ns. The component operates within a junction temperature range of -65°C to 175°C.
Verify the specific suffix 'TT4RG' against the manufacturer's latest datasheet to confirm tape-and-reel packaging and lead-free status. Ensure the ordering part number matches the exact thermal and electrical ratings required for the target application circuit design.
Select this component when a dual common anode topology is required for efficient power management. The TO-252 package provides robust thermal dissipation capabilities. Confirm that the 200 V rating and 6 A current capacity align with the system's peak load and transient requirements.
This device belongs to onsemi's ultrafast rectifier series, designed to replace standard PN junction diodes in high-efficiency applications. The NRVSRD620VCTT4G variant represents the commercial grade version of this family, optimized for general industrial and consumer electronics power supplies.
The MURD620CTT4G is a documented alternative from onsemi offering similar 6 A/200 V specifications in the same TO-252 package. Verify pinout compatibility and thermal resistance differences before substitution.
The device contains two individual Schottky diodes connected in a common anode configuration within a single package.
No, the datasheet does not specify avalanche-rated characteristics for this specific part number; it is intended for standard rectification applications.